2SB1296. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SB1296 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1296

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hFE): 140

Encapsulados: TO126

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2SB1296 datasheet

..1. Size:122K sanyo
2sb1296.pdf pdf_icon

8.1. Size:114K sanyo
2sb1295.pdf pdf_icon

8.2. Size:39K rohm
2sb1292.pdf pdf_icon

2SB1292 Transistors Transistors 2SB1832 (94L-316-B75) (94L-872-D75) 286

8.3. Size:38K rohm
2sb1290.pdf pdf_icon

2SB1290 Transistors Transistors 2SD1833 (96-630-B55) (96-741-D55) 285

8.4. Size:57K rohm
2sb1290 1-2.pdf pdf_icon

8.5. Size:154K rohm
2sb1294.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.6. Size:58K rohm
2sb1292 1-2.pdf pdf_icon

8.7. Size:41K panasonic
2sb1297 e.pdf pdf_icon

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp

8.8. Size:37K panasonic
2sb1297.pdf pdf_icon

8.9. Size:53K panasonic
2sb1299.pdf pdf_icon

Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Unit mm Complementary to 2SD1273 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute

8.10. Size:1395K kexin
2sb1295.pdf pdf_icon

SMD Type Transistors PNP Transistors 2SB1295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capacity. Low collector to emitter saturation voltage. 1 2 Complimentary to 2SD1935. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

8.11. Size:217K inchange semiconductor
2sb1293.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1896 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

8.12. Size:217K inchange semiconductor
2sb1292.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1832 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

8.13. Size:219K inchange semiconductor
2sb1290.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1833 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

8.14. Size:218K inchange semiconductor
2sb1294.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1897 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

8.15. Size:216K inchange semiconductor
2sb1291.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1720 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

Otros transistores... 2SB1291 , 2SB1292 , 2SB1293 , 2SB1294 , 2SB1295 , 2SB1295-5 , 2SB1295-6 , 2SB1295-7 , D667 , 2SB1296S , 2SB1296T , 2SB1296U , 2SB1297 , 2SB1298 , 2SB1299 , 2SB129A , 2SB13 .