2SB1299 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SB1299Silicon PNP epitaxial planar typeFor power amplificationUnit: mmComplementary to 2SD127310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

2SB1292TransistorsTransistors2SB1832(94L-316-B75)(94L-872-D75)286

2SB1290TransistorsTransistors2SD1833(96-630-B55)(96-741-D55)285

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp

Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp

SMD Type TransistorsPNP Transistors2SB1295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capacity. Low collector to emitter saturation voltage.1 2 Complimentary to 2SD1935.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

isc Silicon PNP Power Transistor 2SB1293DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1292DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1832Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1290DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1833Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1294DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1897Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1291DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1720Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE