2SB1306 Todos los transistores

 

2SB1306 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1306
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.2 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: TO92

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2SB1306 Datasheet (PDF)

 8.1. Size:291K  sanyo
2sb1302.pdf

2SB1306
2SB1306

Ordering number : EN2555B2SB1302SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SB1302High-Current Switching ApplicationsApplications DC-DC converters, motor drivers, relay drivers, lamp drivers.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed.

 8.2. Size:134K  nec
2sb1300.pdf

2SB1306
2SB1306

 8.3. Size:37K  rohm
2sb1308.pdf

2SB1306

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290

 8.4. Size:47K  rohm
2sb1308 2sd1963.pdf

2SB1306
2SB1306

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

 8.5. Size:152K  onsemi
2sb1302s 2sb1302t.pdf

2SB1306
2SB1306

Ordering number : EN2555C2SB1302Bipolar Transisitorhttp://onsemi.com ( )20V, 5A, Low VCE sat PNP Single PCPApplicaitons DC-DC converters, motor drivers, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

 8.6. Size:275K  onsemi
2sb1302.pdf

2SB1306
2SB1306

Ordering number : EN2555C2SB1302Bipolar Transisitorhttp://onsemi.com ( )20V, 5A, Low VCE sat PNP Single PCPApplicaitons DC-DC converters, motor drivers, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to

 8.7. Size:183K  htsemi
2sb1308.pdf

2SB1306

2SB1 308TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C

 8.8. Size:476K  willas
2sb1308.pdf

2SB1306
2SB1306

FM120-M WILLASTHRU2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPa c kage outlineFeaturesTRANSISTOR (PNP) esign, excellent power dissipation offers Batch process dSOT-89 better reverse leakage current and thermal resistance.FEATURES SOD-123H Low p Powe

 8.9. Size:50K  kexin
2sb1308-r.pdf

2SB1306

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

 8.10. Size:50K  kexin
2sb1308-q.pdf

2SB1306

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

 8.11. Size:1181K  kexin
2sb1302.pdf

2SB1306
2SB1306

SMD Type TransistorsPNP Transistors2SB13021.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity.0.42 0.1 Fast switching speed. 0.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V

 8.12. Size:1150K  kexin
2sb1308.pdf

2SB1306
2SB1306

SMD Type TransistorsPNP Transistors2SB13081.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage

 8.13. Size:50K  kexin
2sb1308-p.pdf

2SB1306

SMD Type TransistorsPower Transistor2SB1308FeaturesLow saturation voltage, typicallyVCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A.Excellent DC current gain characteristics.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -3 ACollector

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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