2SB1308P Todos los transistores

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 2sb1308.pdf

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290

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 2sb1308 2sd1963.pdf

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o

 7.3. Size:183K  htsemi
 2sb1308.pdf

2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C

 7.4. Size:476K  willas
 2sb1308.pdf

FM120-M WILLAS THRU 2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Pa c kage outline Features TRANSISTOR (PNP) esign, excellent power dissipation offers Batch process d SOT-89 better reverse leakage current and thermal resistance. FEATURES SOD-123H Low p Powe

 7.5. Size:50K  kexin
 2sb1308-r.pdf

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

 7.6. Size:50K  kexin
 2sb1308-q.pdf

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector

 7.7. Size:1150K  kexin
 2sb1308.pdf

SMD Type Transistors PNP Transistors 2SB1308 1.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage

 7.8. Size:50K  kexin
 2sb1308-p.pdf

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector