2SB1309 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1309
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 165 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 120
Encapsulados: TO126
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2SB1309 datasheet
8.1. Size:291K sanyo
2sb1302.pdf 

Ordering number EN2555B 2SB1302 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SB1302 High-Current Switching Applications Applications DC-DC converters, motor drivers, relay drivers, lamp drivers. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed.
8.3. Size:37K rohm
2sb1308.pdf 

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290
8.4. Size:47K rohm
2sb1308 2sd1963.pdf 

2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o
8.5. Size:152K onsemi
2sb1302s 2sb1302t.pdf 

Ordering number EN2555C 2SB1302 Bipolar Transisitor http //onsemi.com ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to
8.6. Size:275K onsemi
2sb1302.pdf 

Ordering number EN2555C 2SB1302 Bipolar Transisitor http //onsemi.com ( ) 20V, 5A, Low VCE sat PNP Single PCP Applicaitons DC-DC converters, motor drivers, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity Fast switching speed Ultrasmall size making it easy to
8.7. Size:183K htsemi
2sb1308.pdf 

2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor Excellent DC current Gain 3. EMITTER Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC C
8.8. Size:476K willas
2sb1308.pdf 

FM120-M WILLAS THRU 2SB1308 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Pa c kage outline Features TRANSISTOR (PNP) esign, excellent power dissipation offers Batch process d SOT-89 better reverse leakage current and thermal resistance. FEATURES SOD-123H Low p Powe
8.9. Size:50K kexin
2sb1308-r.pdf 

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector
8.10. Size:50K kexin
2sb1308-q.pdf 

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector
8.11. Size:1181K kexin
2sb1302.pdf 

SMD Type Transistors PNP Transistors 2SB1302 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity. 0.42 0.1 Fast switching speed. 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base V
8.12. Size:1150K kexin
2sb1308.pdf 

SMD Type Transistors PNP Transistors 2SB1308 1.70 0.1 Features Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage
8.13. Size:50K kexin
2sb1308-p.pdf 

SMD Type Transistors Power Transistor 2SB1308 Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V Collector current IC -3 A Collector
Otros transistores... 2SB1303
, 2SB1304
, 2SB1305
, 2SB1306
, 2SB1307M
, 2SB1308P
, 2SB1308Q
, 2SB1308R
, BD140
, 2SB131
, 2SB1310
, 2SB1311
, 2SB1312
, 2SB1313
, 2SB1314
, 2SB1315
, 2SB1316
.
History: 2SB1322
| 2SB1205R
| BC479B
| 2SB1321
| 2SB1300
| 2N5706
| 2SB1217