2SB1314 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SB1580 / 2SB1316 / 2SB1567TransistorsPower Transistor (-100V , -2A)2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SB15804.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)4) Complements the 2SD2195 / 2SD1980 / 2SD2398.(2)(3)(1) Base(Gate)(2) Collector(Dr

2SB1316 Transistors Power Transistor (-100V , -2A) 2SB1316 External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2SB15804.02) Built-in resistor between base and emitter. 1.0 2.5 0.53) Built-in damper diode. (1)4) Complements the 2SD2195 / 2SD1980. (2)(3)(1) Base(2) Collector Absolute maximum ratings (Ta = 25C) ROHM

Transistor2SB1319Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05

Power Transistors2SB1317Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD1975 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

Transistor2SB1319Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05

isc Silicon PNP Power Transistor 2SB1316DESCRIPTIONDarlington connection for high DC current gainBuilt in resistor between base and emitterBuilt in damper diodeComplementary NPN types:2SD1980100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RA

isc Silicon PNP Power Transistor 2SB1317DESCRIPTIONGood Linearity of hFEWide Area of Safe OperationHigh DC Current-Gain Bandwidth ProductComplement to Type 2SD1975Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplificationOptimum for the output stage of a Hi-Fi audio amplifier.ABSOLUTE MAXIMUM RATING

isc Silicon PNP Power Transistor 2SB1315DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SD1977Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsRecommend for 45-55W audio frequency amplifieroutput stage applic