2SB1316 Todos los transistores

 ..1. Size:64K  rohm
 2sb1580 2sb1316 2sb1567.pdf

2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (-100V , -2A) 2SB1580 / 2SB1316 / 2SB1567 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. (2) (3) (1) Base(Gate) (2) Collector(Dr

 ..2. Size:124K  rohm
 2sb1316.pdf

2SB1316 Transistors Power Transistor (-100V , -2A) 2SB1316 External dimensions (Unit mm) Features 1) Darlington connection for high DC current gain. 2SB1580 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) 4) Complements the 2SD2195 / 2SD1980. (2) (3) (1) Base (2) Collector Absolute maximum ratings (Ta = 25 C) ROHM

 ..3. Size:216K  inchange semiconductor
 2sb1316.pdf

isc Silicon PNP Power Transistor 2SB1316 DESCRIPTION Darlington connection for high DC current gain Built in resistor between base and emitter Built in damper diode Complementary NPN types 2SD1980 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RA

 8.1. Size:120K  nec
 2sb1318.pdf

 8.2. Size:37K  panasonic
 2sb1319.pdf

Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

 8.3. Size:54K  panasonic
 2sb1317.pdf

Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD1975 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio am

 8.4. Size:41K  panasonic
 2sb1319 e.pdf

Transistor 2SB1319 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05

 8.5. Size:120K  isahaya
 2sb1314.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

 8.6. Size:219K  inchange semiconductor
 2sb1317.pdf

isc Silicon PNP Power Transistor 2SB1317 DESCRIPTION Good Linearity of h FE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SD1975 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATING

 8.7. Size:223K  inchange semiconductor
 2sb1315.pdf

isc Silicon PNP Power Transistor 2SB1315 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SD1977 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-55W audio frequency amplifier output stage applic