2SB1320A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SB1320ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1991A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5Parameter Symbol Ratings Unit1 2 3C

Transistors2SB1320ASilicon PNP epitaxial planer typeUnit: mmFor general amplification6.90.1 1.05 2.50.10.05 (1.45)0.7 4.00.8Complementary to 2SD1991A Features0.65 max. High forward current transfer ratio hFE Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol Rating Unit

This product complies with the RoHS Directive (EU 2002/95/EC).Power Transistors 2SB1322Silicon PNP epitaxial planar typeFor low frequency power amplificationComplementary to 2SD1994 Package Features Code Allowing supply with the radial taping MT-2-A1 Absolute Maximum Ratings Ta = 25C Pin Name 1. EmitterParameter Symbol Rating Unit 2. Collector

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

Transistor2SB1322ASilicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1994A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 60

Transistors2SB1322ASilicon PNP epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SD1994A Features0.65 max. Allowing supply with the radial taping+0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25C2.50.5 2.50.51 2 3Parameter Symbol Rating UnitCollector to base voltage VCBO -

Transistor2SB1321ASilicon PNP epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SD1992A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesAllowing supply with the radial taping.Large collector power dissipation PC. (600mW)0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5

Transistors2SB1321ASilicon PNP epitaxial planer typeUnit: mm6.90.1 1.05 2.50.1For general amplification0.05 (1.45)0.7 4.00.8Complementary to 2SD1992A Features0.65 max. Large collector power dissipation PC (600 mW) Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol Rating

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping EmitterCollectorBase JA DCLASSIFICATION OF hFE (1) Millimeter REF.Min. Max.Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-SBA 4.40 4.70

SMD Type TransistorsPNP Transistors2SB13231.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.0.42 0.10.46 0.1 Large current capacity. Complementary to 2SD19971.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

SMD Type TransistorsPNP Transistors2SB13251.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.Collector Large current capacity.0.42 0.10.46 0.1 Complementary to 2SD1999 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SMD Type TransistorsPNP Transistors2SB13241.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.Collector Large current capacity.0.42 0.10.46 0.1 Complementary to 2SD1998 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V