2SB1320A Todos los transistores

 ..1. Size:56K  panasonic
 2sb1320a e.pdf

Transistor 2SB1320A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1991A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 Parameter Symbol Ratings Unit 1 2 3 C

 7.1. Size:73K  panasonic
 2sb1320.pdf

Transistors 2SB1320A Silicon PNP epitaxial planer type Unit mm For general amplification 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1991A Features 0.65 max. High forward current transfer ratio hFE Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol Rating Unit

 8.1. Size:291K  1
 2sb1322.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB1322 Silicon PNP epitaxial planar type For low frequency power amplification Complementary to 2SD1994 Package Features Code Allowing supply with the radial taping MT-2-A1 Absolute Maximum Ratings Ta = 25 C Pin Name 1. Emitter Parameter Symbol Rating Unit 2. Collector

 8.2. Size:323K  1
 2sb1321 2sb1321a.pdf

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten

 8.3. Size:81K  sanyo
 2sb1323.pdf

 8.4. Size:44K  sanyo
 2sb1325.pdf

 8.5. Size:85K  sanyo
 2sb1324.pdf

 8.6. Size:107K  rohm
 2sb1386 2sb1412 2sb1326.pdf

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme

 8.7. Size:195K  rohm
 2sb1329.pdf

 8.8. Size:54K  panasonic
 2sb1322a e.pdf

Transistor 2SB1322A Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1994A 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to base voltage VCBO 60

 8.9. Size:70K  panasonic
 2sb1322a.pdf

Transistors 2SB1322A Silicon PNP epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency power amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1994A Features 0.65 max. Allowing supply with the radial taping +0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25 C 2.5 0.5 2.5 0.5 1 2 3 Parameter Symbol Rating Unit Collector to base voltage VCBO -

 8.10. Size:52K  panasonic
 2sb1321a e.pdf

Transistor 2SB1321A Silicon PNP epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SD1992A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. Large collector power dissipation PC. (600mW) 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5

 8.11. Size:68K  panasonic
 2sb1321a.pdf

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit mm 6.9 0.1 1.05 2.5 0.1 For general amplification 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SD1992A Features 0.65 max. Large collector power dissipation PC (600 mW) Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol Rating

 8.12. Size:78K  secos
 2sb1322a.pdf

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping Emitter Collector Base J A D CLASSIFICATION OF hFE (1) Millimeter REF. Min. Max. Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-S B A 4.40 4.70

 8.13. Size:1029K  kexin
 2sb1323.pdf

SMD Type Transistors PNP Transistors 2SB1323 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. 0.42 0.1 0.46 0.1 Large current capacity. Complementary to 2SD1997 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

 8.14. Size:904K  kexin
 2sb1325.pdf

SMD Type Transistors PNP Transistors 2SB1325 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1999 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

 8.15. Size:1011K  kexin
 2sb1324.pdf

SMD Type Transistors PNP Transistors 2SB1324 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. Collector Large current capacity. 0.42 0.1 0.46 0.1 Complementary to 2SD1998 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V