2SB1322 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

This product complies with the RoHS Directive (EU 2002/95/EC).Power Transistors 2SB1322Silicon PNP epitaxial planar typeFor low frequency power amplificationComplementary to 2SD1994 Package Features Code Allowing supply with the radial taping MT-2-A1 Absolute Maximum Ratings Ta = 25C Pin Name 1. EmitterParameter Symbol Rating Unit 2. Collector

Transistor2SB1322ASilicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD1994A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to base voltage VCBO 60

Transistors2SB1322ASilicon PNP epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SD1994A Features0.65 max. Allowing supply with the radial taping+0.1 0.45-0.05 Absolute Maximum Ratings Ta = 25C2.50.5 2.50.51 2 3Parameter Symbol Rating UnitCollector to base voltage VCBO -

2SB1322A -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G H Allow Supply with The Radial Taping EmitterCollectorBase JA DCLASSIFICATION OF hFE (1) Millimeter REF.Min. Max.Product-Rank 2SB1322A-Q 2SB1322A-R 2SB1322A-SBA 4.40 4.70