2SB1337 Todos los transistores

 

2SB1337 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1337
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SB1337

 

2SB1337 Datasheet (PDF)

 8.1. Size:57K  rohm
2sb1335 1-2.pdf

2SB1337
2SB1337

 8.2. Size:38K  rohm
2sb1335.pdf

2SB1337

2SB1335TransistorsTransistors2SD1855(94L-356-B14)(94L-878-D14)279

 8.3. Size:110K  rohm
2sb1334.pdf

2SB1337
2SB1337

 8.4. Size:211K  inchange semiconductor
2sb1339.pdf

2SB1337
2SB1337

isc Silicon PNP Darlington Power Transistor 2SB1339DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.5. Size:89K  inchange semiconductor
2sb1334a.pdf

2SB1337
2SB1337

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1334A DESCRIPTION With TO-220 package Wide area of safe operation Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base Fig.1 simplified outline (TO-220)

 8.6. Size:218K  inchange semiconductor
2sb1335.pdf

2SB1337
2SB1337

isc Silicon PNP Power Transistor 2SB1335DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

 8.7. Size:217K  inchange semiconductor
2sb1334.pdf

2SB1337
2SB1337

isc Silicon PNP Power Transistor 2SB1334DESCRIPTIONHigh Collector Current:: I = -4ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1778Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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