2SB1353 Todos los transistores

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Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

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isc Silicon PNP Power Transistor 2SB1353 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD2033 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

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Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

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E (2k )(100 ) B Darlington 2SB1352 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor Application Driver for Printer Head, Solenoid, Relay, Motor and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

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 2sb1351.pdf

E (2k )(100 ) B Darlington 2SB1351 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor Application Driver for Printer Head, Solenoid, Relay, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Ratings Unit Symbol Condition Ratings Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 60