2SB1353 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

isc Silicon PNP Power Transistor 2SB1353DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

E(2k)(100)BDarlington 2SB1352Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit0.20.2 5.515.60.23.45VCBO

E(2k)(100)BDarlington 2SB1351Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Unit Symbol Condition RatingsUnit0.24.20.210.1c0.52.8VCBO 60