2SB1354 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1354
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar 2SB1354
2SB1354 Datasheet (PDF)
2sb1357.pdf
Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep
2sb1353.pdf
Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep
2sb1352.pdf
E(2k)(100)BDarlington 2SB1352Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SB1352 Unit Symbol Conditions 2SB1352 Unit0.20.2 5.515.60.23.45VCBO
2sb1351.pdf
E(2k)(100)BDarlington 2SB1351Equivalent circuitCSilicon PNP Epitaxial Planar TransistorApplication : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Ratings Unit Symbol Condition RatingsUnit0.24.20.210.1c0.52.8VCBO 60
2sb1353.pdf
isc Silicon PNP Power Transistor 2SB1353DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2033Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050