2SB1362 Todos los transistores

 ..1. Size:220K  inchange semiconductor
 2sb1362.pdf

isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2053 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.1. Size:104K  mcc
 2sb1366f-o.pdf

MCC TM Micro Commercial Components 2SB1366F-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1366F-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT) VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Power Transistors Lead Free Finish/RoHS Compliant (No

 8.2. Size:104K  mcc
 2sb1366f-y.pdf

MCC TM Micro Commercial Components 2SB1366F-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1366F-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Low VCE(SAT) VCE(SAT)=-1.0V(Max.)(IC/IB=-2A/-0.2A) Power Transistors Lead Free Finish/RoHS Compliant (No

 8.3. Size:51K  panasonic
 2sb1361.pdf

Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2052 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed t

 8.4. Size:495K  no
 2n3904 2n3906 2n5401 2n5551 2sa1271 2sa1273 2sa1275 2sa1276 2sa1366 2sa1657 2sa1658 2sb1366 2sb988 2sc3190 2sc3191 2sc3192.pdf

 8.5. Size:213K  inchange semiconductor
 2sb1367.pdf

isc Silicon PNP Power Transistor 2SB1367 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -2.0V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type 2SD2059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

 8.6. Size:222K  inchange semiconductor
 2sb1361.pdf

isc Silicon PNP Power Transistor 2SB1361 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2052 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.7. Size:213K  inchange semiconductor
 2sb1369.pdf

isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -0.5A, I = -50mA) CE(sat) C B Complement to Type 2SD2061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage applications. TV, monitor vertical

 8.8. Size:213K  inchange semiconductor
 2sb1366.pdf

isc Silicon PNP Power Transistor 2SB1366 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type 2SD2058 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

 8.9. Size:213K  inchange semiconductor
 2sb1368.pdf

isc Silicon PNP Power Transistor 2SB1368 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25W@ T = 25 C C Low Collector Saturation Voltage- V = -1.7V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD2060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO