2SB1387 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TransistorsLow Frequency Transistor (*20V,*5A)2SB1386 / 2SB1412 / 2SB1326 / 2SB1436FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.35V (Typ.)(IC / IB = *4A / *0.1A)2) Excellent DC current gain charac-teristics.3) Complements the 2SD2098 /2SD2118 / 2SD2097 / 2SD2166.FStructureEpitaxial planar typePNP silicon transistor(96-141-B204)211Tra

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit : mm) Features 1) Low VCE(sat). 2SB1386 2SB1412VCE(sat) = -0.35V (Typ.) 2.3+0.26.50.2-0.14.5+0.2C0.5-0.15.1+0.21.5+0.2 -0.1 0.50.1(IC/IB = -4A / -0.1A) 1.60.1 -0.12) Excellent DC current gain characteristics. 3) Compleme

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Pin Assignment Order Number Package Packing 1 2 32SB1386G-x-AB3-R SOT-89 B C E Tape ReelNote: Pin Assignment: B: Base C: Collector E: Emit

2SB1389Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter14.5 k 500 23(Typ) (Typ)32SB1389Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector cur

2SB1386 -5A, -30V PNP Silicon Low Frequency Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Low VCE(sat) 4 Excellent DC current gain characteristics Complements the 2SD2098 123AECCLASSIFICATION OF hFE Product-Rank 2SB1386-P 2SB1386-Q 2SB1386-R B DRange 82~180 120~270 180~39

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1386 TRANSISTOR (PNP) SOT-89-3L FEATURES Low collector saturation voltage 1. BASE Execllent current-to-gain characteristics 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO -30 VCollector-Base Voltage VCEO Col

JMnic Product Specification Silicon PNP Power Transistors 2SB1389 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage DARLINGTON APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SB1381 DESCRIPTION With TO-220F package Complement to type 2SD2079 Low collector saturation voltage High DC current gain APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol

E(2k) (80)BDarlington 2SB1383Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2083)Application : Chopper Regulator, DC Motor Driver and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Conditions Ratings UnitUnit Symbol0.24.80.415.60

E(2k) (80)BDarlington 2SB1382Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082)Application : Chopper Regulator, DC Motor Driver and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.20.2 5.515.60.

2SB1 38 6TRANSISTOR(PNP)FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -30 VCollector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -5 A PC Collector Power Dissipation 0.5 W TJ J

2SB1386 SOT-89 Transistor(PNP)1. BASE SOT-891 2. COLLECTOR 4.6B4.42 1.61.81.41.43. EMITTER 3 2.6 4.252.43.75Features 0.8MIN Low collector saturation voltage, 0.530.400.480.442x)0.13 B0.35 Execllent current-to-gain characteristics 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters

2SB1386PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Excellent DC Current Gain Characteristics* Low VCE(Sat)Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol Value UnitVCBO-30 VCollector to Base VoltageVCEO-20 VCollector to Emitter VoltageVVEBO -6Collector to

FM120-M WILLAS2SB1386THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dTRANSISTOR (PNP) eesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123HSOT-89 Low pFEATURES mirofile surf

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 20 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation2 2) Junction Tempera

SMD Type TransistorsLow Frequency Transistor2SB1386FeaturesLow VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -5

SMD Type TransistorsLow Frequency Transistor2SB1386FeaturesLow VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -5

SMD Type Transistors PNP Transistors2SB1386Features1.70 0.1Low VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar type0.42 0.10.46 0.1PNP silicon transistor1.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VE

SMD Type TransistorsLow Frequency Transistor2SB1386FeaturesLow VCE(sat).VCE(sat) = -0.35V (Typ.)(IC/IB = -4A / -0.1A)Excellent DC current gainEpitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -30 VCollector-emitter voltage VCEO -20 VEmitter-base voltage VEBO -6 VCollector current IC -5

CHENMKO ENTERPRISE CO.,LTD2SB1386PGPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (DPAK)DPAK* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * High saturation current capability..094 (2.38).086 (2.19).022 (0.55).018 (0.45)MARKING* hFE Classification P

CHENMKO ENTERPRISE CO.,LTD2SB1386GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) * PC= 2.0W (mounted on ceramic substrate).* High saturation current capability.4.6MAX. 1.6MAX.1.7MAX.

isc Silicon PNP Darlington Power Transistor 2SB1389DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1383DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = -12A, V = -4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD2083Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for driver of solenoid, motor and generalpurp

isc Silicon PNP Darlington Power Transistor 2SB1382DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000( Min.) @(I = -8A, V = -4V)FE C CELow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -8A, I = -16mA)CE(sat) C BComplement to Type 2SD2082Minimum Lot-to-Lot variations for robust device performanceand reli

isc Silicon PNP Darlington Power Transistor 2SB1381DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -2.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2.5A, I = -5mA)CE(sat) C BComplement to Type 2SD2079Minimum Lot-to-Lot variations for robust device performanceand rel