2SB1392C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1392C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220FM
Búsqueda de reemplazo de transistor bipolar 2SB1392C
2SB1392C Datasheet (PDF)
2sb1392.pdf
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To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sb1392.pdf
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isc Silicon PNP Power Transistor 2SB1392DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo
2sb1396.pdf
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Ordering number:EN2911PNP Epitaxial Planar Silicon Transistor2SB1396DC-DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SB1396] Small size making it easy to provide high-density,small-sized hybrid ICs.E : EmitterC : Collecto
2sb1395.pdf
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Ordering number:EN2910PNP Epitaxial Planar Silicon Transistor2SB1395DC-DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2003A Low collector-to-emitter saturation voltage.[2SB1395]JEDEC : TO-92EIAJ : SC-43SANYO: NP B : BaseC : CollectorE : EmitterSpecificationsAbsolute Max
2sb1393.pdf
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Power Transistors2SB1393, 2SB1393ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD1985 and 2SD1985AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory linearity of foward current transfer ratio hFE5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink withone screw 3.1
2sb1398.pdf
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Transistor2SB1398Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sy
2sb1398 e.pdf
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Transistor2SB1398Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sy
2sb1390.pdf
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2SB1390Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter14 k 200 23(Typ) (Typ)32SB1390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector curre
2sb1399.pdf
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2SB1399Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter12 1.0 k 200 3(Typ) (Typ)32SB1399Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector cu
2sb1391.pdf
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2SB1391Silicon PNP Triple DiffusedApplicationPower switchingOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SB1391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACo
2sb1393a.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute
2sb1393.pdf
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JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute
2sb1396.pdf
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SMD Type TransistorsPNP Transistors2SB13961.70 0.1 Features Low collector to emitter saturation voltage Large current capacity0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 V Emitter - Base Voltage VEBO -7 Collector Cu
2sb1397.pdf
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SMD Type TransistorsPNP Transistors2SB13971.70 0.1 Features Low collector to emitter saturation voltage Large current capacity Complementary to 2SD2100 Collector0.42 0.10.46 0.1 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Volt
2sb1394.pdf
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SMD Type TransistorsPNP Transistors2SB13941.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.0.42 0.10.46 0.1 Large current capacity. Complementary to 2SD20991.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo
2sb1390.pdf
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isc Silicon PNP Darlington Power Transistor 2SB1390DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sb1393.pdf
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isc Silicon PNP Power Transistor 2SB1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.2V(Max,)@ I = -3ACE(sat) CComplement to Type 2SD1985Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.
2sb1393 2sb1393a.pdf
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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3
2sb1391.pdf
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isc Silicon PNP Darlington Power Transistor 2SB1391DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .