2SB1393 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SB1393, 2SB1393ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD1985 and 2SD1985AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory linearity of foward current transfer ratio hFE5.5 0.2 2.7 0.2Low collector to emitter saturation voltage VCE(sat)Full-pack package which can be installed to the heat sink withone screw 3.1

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

isc Silicon PNP Power Transistor 2SB1393DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = -1.2V(Max,)@ I = -3ACE(sat) CComplement to Type 2SD1985Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute

Ordering number:EN2911PNP Epitaxial Planar Silicon Transistor2SB1396DC-DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2038 Low collector-to-emitter saturation voltage.[2SB1396] Small size making it easy to provide high-density,small-sized hybrid ICs.E : EmitterC : Collecto

Ordering number:EN2910PNP Epitaxial Planar Silicon Transistor2SB1395DC-DC Converter, Motor Driver ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity.2003A Low collector-to-emitter saturation voltage.[2SB1395]JEDEC : TO-92EIAJ : SC-43SANYO: NP B : BaseC : CollectorE : EmitterSpecificationsAbsolute Max

Transistor2SB1398Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sy

Transistor2SB1398Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sy

2SB1390Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter14 k 200 23(Typ) (Typ)32SB1390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector curre

2SB1399Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220FM211. BaseID2. Collector3. Emitter12 1.0 k 200 3(Typ) (Typ)32SB1399Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector cu

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1391Silicon PNP Triple DiffusedApplicationPower switchingOutlineTO-220FM211. Base2. Collector3. Emitter12 k 200 23(Typ) (Typ)32SB1391Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACo

SMD Type TransistorsPNP Transistors2SB13961.70 0.1 Features Low collector to emitter saturation voltage Large current capacity0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 V Emitter - Base Voltage VEBO -7 Collector Cu

SMD Type TransistorsPNP Transistors2SB13971.70 0.1 Features Low collector to emitter saturation voltage Large current capacity Complementary to 2SD2100 Collector0.42 0.10.46 0.1 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Volt

SMD Type TransistorsPNP Transistors2SB13941.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage.0.42 0.10.46 0.1 Large current capacity. Complementary to 2SD20991.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

isc Silicon PNP Darlington Power Transistor 2SB1390DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1392DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon PNP Darlington Power Transistor 2SB1391DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO