2SB1398 Todos los transistores

 ..1. Size:38K  panasonic
 2sb1398.pdf

Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sy

 ..2. Size:43K  panasonic
 2sb1398 e.pdf

Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sy

 8.1. Size:89K  sanyo
 2sb1396.pdf

Ordering number EN2911 PNP Epitaxial Planar Silicon Transistor 2SB1396 DC-DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SB1396] Small size making it easy to provide high-density, small-sized hybrid ICs. E Emitter C Collecto

 8.2. Size:114K  sanyo
 2sb1397.pdf

 8.3. Size:91K  sanyo
 2sb1395.pdf

Ordering number EN2910 PNP Epitaxial Planar Silicon Transistor 2SB1395 DC-DC Converter, Motor Driver Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity. 2003A Low collector-to-emitter saturation voltage. [2SB1395] JEDEC TO-92 EIAJ SC-43 SANYO NP B Base C Collector E Emitter Specifications Absolute Max

 8.4. Size:107K  sanyo
 2sb1394.pdf

 8.5. Size:46K  panasonic
 2sb1393.pdf

 8.6. Size:36K  hitachi
 2sb1390.pdf

2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 4 k 200 2 3 (Typ) (Typ) 3 2SB1390 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector curre

 8.7. Size:36K  hitachi
 2sb1399.pdf

2SB1399 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base ID 2. Collector 3. Emitter 1 2 1.0 k 200 3 (Typ) (Typ) 3 2SB1399 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector cu

 8.8. Size:42K  hitachi
 2sb1392.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.9. Size:35K  hitachi
 2sb1391.pdf

2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 k 200 2 3 (Typ) (Typ) 3 2SB1391 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Co

 8.10. Size:195K  jmnic
 2sb1393a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

 8.11. Size:193K  jmnic
 2sb1393.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

 8.12. Size:1030K  kexin
 2sb1396.pdf

SMD Type Transistors PNP Transistors 2SB1396 1.70 0.1 Features Low collector to emitter saturation voltage Large current capacity 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Collector - Emitter Voltage VCEO -10 V Emitter - Base Voltage VEBO -7 Collector Cu

 8.13. Size:1085K  kexin
 2sb1397.pdf

SMD Type Transistors PNP Transistors 2SB1397 1.70 0.1 Features Low collector to emitter saturation voltage Large current capacity Complementary to 2SD2100 Collector 0.42 0.1 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Volt

 8.14. Size:1127K  kexin
 2sb1394.pdf

SMD Type Transistors PNP Transistors 2SB1394 1.70 0.1 Features Contains diode between collector and emitter. Low saturation voltage. 0.42 0.1 0.46 0.1 Large current capacity. Complementary to 2SD2099 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Vo

 8.15. Size:212K  inchange semiconductor
 2sb1390.pdf

 8.16. Size:217K  inchange semiconductor
 2sb1393.pdf

isc Silicon PNP Power Transistor 2SB1393 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = -1.2V(Max,)@ I = -3A CE(sat) C Complement to Type 2SD1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications.

 8.17. Size:151K  inchange semiconductor
 2sb1393 2sb1393a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1393 2SB1393A DESCRIPTION With TO-220Fa package Satisfactory linearity of hFE Low collector to emitter saturation voltage Complement to type 2SD1985/1985A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3

 8.18. Size:200K  inchange semiconductor
 2sb1392.pdf

isc Silicon PNP Power Transistor 2SB1392 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

 8.19. Size:210K  inchange semiconductor
 2sb1391.pdf

isc Silicon PNP Darlington Power Transistor 2SB1391 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -4A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO