2SB1404 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Darlington Power Transistor 2SB1404DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

Ordering number:EN3470PNP Epitaxial Planar Silicon Darlington Transistor2SB1406Driver ApplicationsApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers.2064[2SB1406]Features Darlington connection. High DC current gain. Large current capacity.E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsol

Ordering number:EN3236PNP Epitaxial Planar Silicon Transistor2SB1405General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064 Large current capacity, wide ASO.[2SB1405]E : EmitterC : CollectorB : BaseSANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings Un

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SB1401Silicon PNP Triple DiffusedADE-208-875 (Z)1st. EditionSep. 2000ApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 55 k3(Typ)32SB1401Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VE

2SB1400Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineTO-220FM211. Base2. Collector3. Emitter12 1 k 400 3(Typ) (Typ)32SB1400Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC

SMD Type TransistorsPNP Transistors2SB1407STO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low frequency power amplifier Complementary to 2SD21210.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

isc Silicon PNP Darlington Power Transistor 2SB1402DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1400DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1403DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)High DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25