2SB141 Todos los transistores

 0.1. Size:215K  toshiba
 2sb1411.pdf

 0.2. Size:107K  rohm
 2sb1386 2sb1412 2sb1326.pdf

2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme

 0.3. Size:81K  panasonic
 2sb1414.pdf

Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit mm 7.5 0.2 4.5 0.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 hFE vs. collector High transition frequency fT 0.7 0.1 Allowing automatic insertio

 0.4. Size:61K  panasonic
 2sb1418.pdf

Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25 C) 0.35

 0.5. Size:55K  panasonic
 2sb1417.pdf

Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (T

 0.6. Size:82K  panasonic
 2sb1416.pdf

Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 7.5 0.2 4.5 0.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Allowing automatic insertion with

 0.7. Size:186K  utc
 2sb1412.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 0.8. Size:216K  utc
 2sb1412l-p 2sb1412l-q 2sb1412l-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

 0.9. Size:255K  lge
 2sb1412.pdf

2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current Continuous -5 A PC Collector Po

 0.10. Size:249K  wietron
 2sb1412.pdf

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data * Case Molded Plastic * Weight 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltag

 0.11. Size:1550K  kexin
 2sb1412.pdf

SMD Type Transistors PNP Transistors 2SB1412 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Excellent DC current gain characteristics Low VCE(SAT) VCE(SAT)= -0.35V (Typ) 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo

 0.12. Size:39K  kexin
 2sb1412-p.pdf

SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit

 0.13. Size:39K  kexin
 2sb1412-q.pdf

SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit

 0.14. Size:39K  kexin
 2sb1412-r.pdf

SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit

 0.15. Size:245K  lzg
 2sb1412 3ca1412.pdf

2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD2118(3DG2118) Features Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat) /Absolute maximum ratings(Ta=25 )

 0.16. Size:253K  inchange semiconductor
 2sb1412.pdf

isc Silicon PNP Power Transistor 2SB1412 DESCRIPTION Low collector-to-emitter saturation voltage V = -1.0V(Max)@I = -4A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec

 0.17. Size:199K  inchange semiconductor
 2sb1419.pdf

isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER

 0.18. Size:213K  inchange semiconductor
 2sb1411.pdf

isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -1A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS H