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2SB145 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB145
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.1 MHz
   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar 2SB145

 

2SB145 Datasheet (PDF)

 0.1. Size:191K  toshiba
2sb1457.pdf

2SB145
2SB145

 0.2. Size:130K  nec
2sb1453.pdf

2SB145
2SB145

DATA SHEETSILICON TRANSISTOR2SB1453PNP SILICON EPITAXIAL POWER TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm)the IC output. This transistor is ideal for motor drivers and solenoiddrivers in such as OA and FA equipment.In addition, a small resin-molded insulation type packagecontributes to high-density

 0.3. Size:217K  jmnic
2sb1455.pdf

2SB145
2SB145

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1455 DESCRIPTION With TO-220F package Complement to type 2SD2203 Low collector saturation voltage: Large current capacity APPLICATIONS High current power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 BaseAbsolute maximum ratings

 0.4. Size:217K  inchange semiconductor
2sb1455.pdf

2SB145
2SB145

isc Silicon PNP Power Transistor 2SB1455DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -4A, I = -0.4A)CE(sat) C BComplement to Type 2SD2203Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-current switching applications.AB

 0.5. Size:217K  inchange semiconductor
2sb1454.pdf

2SB145
2SB145

isc Silicon PNP Power Transistor 2SB1454DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.5V(Max)@ (I = -3A, I = -0.3A)CE(sat) C BComplement to Type 2SD2202Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-current switching applications.AB

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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