2SB1462 Todos los transistores

Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter S... See More ⇒

Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Unit mm 0.2+0.1 0.15+0.1 Complementary to 2SD2216 0.05 0.05 3 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.5) (0.5) 1.0 0.1 1.6 0.1 5 Absolute Maximum Rat... See More ⇒

Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. +0.05 Absolute Maximum Ratings (Ta=25 C)... See More ⇒

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PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay driv... See More ⇒

Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD2240 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 ... See More ⇒

Transistors 2SB1463 Silicon PNP epitaxial planar type Unit mm For high breakdown voltage low-frequency amplification 0.2+0.1 0.15+0.1 0.05 0.05 Complementary to 2SD2240 3 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV 1 2 (0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and 1.0 0.1 automatic insertion t... See More ⇒

isc Silicon PNP Power Transistor 2SB1468 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.25A) CE(sat) C B Complement to Type 2SD2219 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed inverters,converters. ABSOL... See More ⇒