2SB1464 Todos los transistores

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PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay driv... See More ⇒

Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter S... See More ⇒

Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Unit mm 0.2+0.1 0.15+0.1 Complementary to 2SD2216 0.05 0.05 3 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.5) (0.5) 1.0 0.1 1.6 0.1 5 Absolute Maximum Rat... See More ⇒

Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD2240 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 ... See More ⇒

Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. +0.05 Absolute Maximum Ratings (Ta=25 C)... See More ⇒

Transistors 2SB1463 Silicon PNP epitaxial planar type Unit mm For high breakdown voltage low-frequency amplification 0.2+0.1 0.15+0.1 0.05 0.05 Complementary to 2SD2240 3 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV 1 2 (0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and 1.0 0.1 automatic insertion t... See More ⇒

isc Silicon PNP Power Transistor 2SB1468 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.25A) CE(sat) C B Complement to Type 2SD2219 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed inverters,converters. ABSOL... See More ⇒