2SB1488 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1488
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 25 typ MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: MT2
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2SB1488 datasheet
2sb1488.pdf
Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3
2sb1488 e.pdf
Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3
2sb1481.pdf
isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A) CE(sat) C Complement to Type 2SD2241 Minimum Lot-to-Lot variations for robust device performance and reliable operatio
2sb1437.pdf
/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o
2sb1406.pdf
Ordering number EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2064 [2SB1406] Features Darlington connection. High DC current gain. Large current capacity. E Emitter C Collector B Base SANYO NMP Specifications Absol
2sb1405.pdf
Ordering number EN3236 PNP Epitaxial Planar Silicon Transistor 2SB1405 General Driver Applications Features Package Dimensions Darlington connection. unit mm High DC current gain. 2064 Large current capacity, wide ASO. [2SB1405] E Emitter C Collector B Base SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Un
2sb1453.pdf
DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density
2sb1430.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT mm) drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this
2sb1432.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA Part No. Package equipment such as motor and solenoid drivers. 2SB143
2sb1465.pdf
PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT mm) frequency power amplifier and low-speed switching. This transistor is ideal for use in a direct drive from IC output to relay driv
2sb1427.pdf
2SB1427 Transistors Power transistor (-20V, -2A) 2SB1427 External dimensions (Unit mm) Features 1) Low saturation voltage, 4.0 VCE Max . -0.5V at IC/IB = -1A / -50mA. 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM MPT3 EIAJ SC-62 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un
2sa1797 2sb1443.pdf
2SA1797 / 2SB1443 Transistors Power Transistor (-50V, -2A) 2SA1797 / 2SB1443 Features 1) Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. 2) Excellent DC current gain characteristics. 4) Complements the 2SA1797 and 2SC4672. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage
2sb1443.pdf
Power Transistor (-50V, -2A) 2SB1443 Features Dimensions (Unit mm) 1) Low saturation voltage. ATV VCE (sat) = -0.35V (Max.) at IC / IB = -1A / 50mA. 2) Excellent DC current gain characteristics. Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit (1) (2) (3) (1) (2) (3) (1) Emitter Collector-base voltage VCBO -50 V (2) Collector Collector-emitter
2sb1474.pdf
2SB1474 Transistor Power Transistor (-80V, -4A) 2SB1474 Features External dimensions (Units mm) 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 5.5 1.5 3) Built-in damper doide. 0.9 C0.5 Absolute maximum ratings (Ta=25 C) 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM CPT3 9.5 Parameter Symbol Limits Unit (3) Emitter(Sour
2sa1797 2sb1443 2sc4672.pdf
2SA1797 / 2SB1443 Transistors Transistors 2SC4672 (96-100-B208) (96-181-D208) 291
2sb1424 2sa1585s.pdf
2SB1424 / 2SA1585S Transistors Low VCE(sat) Transistor (-20V, -3A) 2SB1424 / 2SA1585S External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1424 2SA1585S VCE(sat) = -0.2V (Typ.) 4 0.2 2 0.2 4.5+0.2 (IC/IB = -2A / -0.1A) -0.1 1.5 0.1 1.6 0.1 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. 0.45+0.15 (1) (2) (3) -0.05
2sa1585s 2sb1424 2sb1424.pdf
Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC/IB = *2A / *0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-596-A74) 201 Transist
2sb1386 2sb1412 2sb1326.pdf
2SB1386 / 2SB1412 / 2SB1326 Transistors Low frequency transistor (-20V, -5A) 2SB1386 / 2SB1412 / 2SB1326 External dimensions (Unit mm) Features 1) Low VCE(sat). 2SB1386 2SB1412 VCE(sat) = -0.35V (Typ.) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 C0.5 -0.1 5.1+0.2 1.5+0.2 -0.1 0.5 0.1 (IC/IB = -4A / -0.1A) 1.6 0.1 -0.1 2) Excellent DC current gain characteristics. 3) Compleme
2sb1446 e.pdf
Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo
2sb1462 e.pdf
Transistor 2SB1462 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 3 zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter S
2sb1434.pdf
Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 Complementary to 2SD2177 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter ope
2sb1493.pdf
Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD2255 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 3.2 0.1 Low collector to emitter saturation voltage VCE(sat)
2sb1462.pdf
Transistors 2SB1462 Silicon PNP epitaxial planar type For general amplification Unit mm 0.2+0.1 0.15+0.1 Complementary to 2SD2216 0.05 0.05 3 Features High forward current transfer ratio hFE SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.5) (0.5) 1.0 0.1 1.6 0.1 5 Absolute Maximum Rat
2sb1446.pdf
Transistor 2SB1446 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2179 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symbo
2sb1463 e.pdf
Transistor 2SB1463 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD2240 1.6 0.15 0.4 0.8 0.1 0.4 Features High collector to emitter voltage VCEO. 1 Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2
2sb1414.pdf
Power Transistors 2SB1414 Silicon PNP epitaxial planar type For low-frequency driver/high power amplification Unit mm 7.5 0.2 4.5 0.2 Complementary to 2SD2134 Features Excellent current IC characteristics of forward current transfer ratio 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 hFE vs. collector High transition frequency fT 0.7 0.1 Allowing automatic insertio
2sb1490.pdf
Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit mm 20.0 0.5 5.0 0.3 For power amplification (3.0) Complementary to 2SD2250 3.3 0.2 Features Optimum for 80 W HiFi output (1.5) High forward current transfer ratio hFE (1.5) Low collector-emitter saturation voltage VCE(sat) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 0.6 0.2 Absolute
2sb1470.pdf
Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit mm 20.0 0.5 5.0 0.3 For power amplification (3.0) Complementary to 2SD2222 3.3 0.2 Features Optimum for 120 W HiFi output (1.5) High forward current transfer ratio hFE (1.5) Low collector-emitter saturation voltage VCE(sat) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 0.6 0.2
2sb1438 e.pdf
Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5
2sb1440 e.pdf
Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2185 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0
2sb1418.pdf
Power Transistors 2SB1418, 2SB1418A Silicon PNP epitaxial planar type Darlington Unit mm For power amplification Complementary to 2SD2138 and 2SD2138A 5.0 0.1 10.0 0.2 1.0 Features High foward current transfer ratio hFE 90 High-speed switching Allowing automatic insertion with radial taping 1.2 0.1 C1.0 2.25 0.2 0.65 0.1 Absolute Maximum Ratings (TC=25 C) 0.35
2sb1417.pdf
Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 5.0 0.1 Low collector to emitter saturation voltage VCE(sat) 10.0 0.2 1.0 Allowing automatic insertion with radial taping 90 Absolute Maximum Ratings (T
2sb1440.pdf
Transistors 2SB1440 Silicon PNP epitaxial planar type Unit mm For low-frequency output amplification 4.5 0.1 1.6 0.2 1.5 0.1 Complementary to 2SD2185 Features Low collector-emitter saturation voltage VCE(sat) 1 23 0.4 0.08 0.5 0.08 0.4 0.04 Mini Power type package, allowing downsizing of the equipment 1.5 0.1 and automatic insertion through the tape packing and
2sb1416.pdf
Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 7.5 0.2 4.5 0.2 Complementary to 2SD2136 Features High forward current transfer ratio hFE which has satisfactory 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 linearity Low collector-emitter saturation voltage VCE(sat) 0.7 0.1 Allowing automatic insertion with
2sb1462j e.pdf
Transistor 2SB1462J Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD2216J 1.60 0.05 0.80 0.80 0.05 0.425 0.425 Features High foward current transfer ratio hFE. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. +0.05 Absolute Maximum Ratings (Ta=25 C)
2sb1492 2sd2254 2sd2254.pdf
Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)
2sb1463.pdf
Transistors 2SB1463 Silicon PNP epitaxial planar type Unit mm For high breakdown voltage low-frequency amplification 0.2+0.1 0.15+0.1 0.05 0.05 Complementary to 2SD2240 3 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV 1 2 (0.5) (0.5) SS-Mini type package, allowing downsizing of the equipment and 1.0 0.1 automatic insertion t
2sb1434 e.pdf
Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2177 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sym
2sb1438.pdf
Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) Large collector-emitter voltage (Base open) VCEO 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector
2sb1412.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
2sb1412l-p 2sb1412l-q 2sb1412l-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing
2sb1409.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sb1407.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
2sb1401.pdf
2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VE
2sb1400.pdf
2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 1 k 400 3 (Typ) (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC
2sb1494.pdf
2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SB1494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Col
2sb1436.pdf
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION With TO-126 package Complement to type 2SD2166 Low collector saturation voltage APPLICATIONS For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO
2sb1424.pdf
2SB1424 PNP Silicon Elektronische Bauelemente Medium Power Transistor RoHS Compliant Product D A suffix of "-C" specifies halogen & lead-free D1 A b1 1.BASE SOT-89 2.COLLECTOR b C e 3. EMITTER e1 FEATURES Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 1.400 1.600 0.055 0.063 Power dissipation b 0.320 0.520 0.013 0.020 b1 0.36
2sb1440.pdf
2SB1440 -2 A, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification B 1 C 2 Complements to 2SD2185 E 3 A E C PACKAGE INFORMATION Package MPQ LeaderSize B D
2sb1424.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1424 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Excellent DC current gain Low collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base V
2sb1440.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1440 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Para meter V
2sb1455.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1455 DESCRIPTION With TO-220F package Complement to type 2SD2203 Low collector saturation voltage Large current capacity APPLICATIONS High current power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratings
2sb1429.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1429 DESCRIPTION With TO-3PL package Complement to type 2SD2155 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3
2sb1448.pdf
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1448 Case ITO-3P (TP15J10) -15A PNP RATINGS Unit mm
2sb1424.pdf
2SB1 424 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Excellent DC Current Gain Low Collector-emitter saturation voltage 3. EMITTER Complement the 2SD2150 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V V Collector-Emitter Voltage -20 V CEO VEBO Emitter-Base Voltage -6 V I Collecto
2sb1440.pdf
2SB1 440 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 For low-frequency output amplification 2 Complementary to 2SD2185 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Bas
2sb1412.pdf
2SB1412(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current Continuous -5 A PC Collector Po
2sb1440 sot-89.pdf
2SB1440 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 0.40 For low-frequency output amplification 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SD2185 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted)
2sb1412.pdf
2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Excellent DC Current Gain Characteristics D-PAK(TO-252) * Low VCE(Sat) Mechanical Data * Case Molded Plastic * Weight 0.925 grams ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO -30 V Collector to Base Voltage VCEO -20 V Collector to Emitter Voltag
2sb1424.pdf
2SB1424 Epitaxial Planar PNP Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Vdc Collector-Base Voltage V -20 CBO Vdc Collector-Emitter Voltage -20 VCEO Vdc Emitter-Base Voltage -6 VEBO I A(DC) -3 C Collector Current ICP -5 A (Pulse)* PD 0.6 W Collector Power Dissipation %
2sb1440.pdf
FM120-M WILLAS 2SB1440THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) SOD-123H Low profile surface mounted application
2sb1412.pdf
SMD Type Transistors PNP Transistors 2SB1412 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Excellent DC current gain characteristics Low VCE(SAT) VCE(SAT)= -0.35V (Typ) 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbo
2sb1427.pdf
SMD Type Transistors PNP Transistors 2SB1427 1.70 0.1 Features Low saturation voltage, Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -6 Collector Cu
2sb1424.pdf
SMD Type Transistors PNP Transistors 2SB1424 1.70 0.1 Features Excellent DC current gain Low collector-emitter saturation voltage Complementary to 2SD2150 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V Emitter - Base
2sb1440.pdf
SMD Type Transistors PNP Transistors 2SB1440 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SD2185 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO
2sb1412-p.pdf
SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit
2sb1475.pdf
SMD Type Transistors PNP Transistors 2SB1475 Features Super Miniature Package Low collector-emitter saturation voltage High DC Current 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -16 V Emitter - Base Voltage VEBO -6 Collector Current - Co
2sb1407s.pdf
SMD Type Transistors PNP Transistors 2SB1407S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low frequency power amplifier Complementary to 2SD2121 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
2sb1412-q.pdf
SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit
2sb1412-r.pdf
SMD Type Transistors Low Frequency Transistor 2SB1412 TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features Low VCE(sat). PNP silicon transistor. 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emit
2sb1412 3ca1412.pdf
2SB1412(3CA1412) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD2118(3DG2118) Features Low V ,excellent DC current gain characteristics, complements the 2SD2118(3DG2118). CE(sat) /Absolute maximum ratings(Ta=25 )
2sb1477.pdf
isc Silicon PNP Power Transistor 2SB1477 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2236 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sb1404.pdf
isc Silicon PNP Darlington Power Transistor 2SB1404 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sb1412.pdf
isc Silicon PNP Power Transistor 2SB1412 DESCRIPTION Low collector-to-emitter saturation voltage V = -1.0V(Max)@I = -4A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
2sb1478.pdf
isc Silicon PNP Darlington Power Transistor 2SB1478 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -2A FE C Low Collector Saturation Voltage- V = -2.0V(Max.) @I = 5A CE(sat) C Complement to Type 2SD2237 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power linear and switching applications. ABSOLUTE MA
2sb1431.pdf
isc Silic on PNP Darlington Power Transistor 2SB1431 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -3A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A, I = -3mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
2sb1402.pdf
isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sb1492.pdf
isc Silicon PNP Darlington Power Transistor 2SB1492 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2254 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Optimum for 60W HiFi
2sb1490.pdf
isc Silicon PNP Darlington Power Transistor 2SB1490 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD2250 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 80W HiFi o
2sb1430.pdf
isc Silicon PNP Darlington Power Transistor 2SB1430 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D
2sb1455.pdf
isc Silicon PNP Power Transistor 2SB1455 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type 2SD2203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-current switching applications. AB
2sb1470.pdf
isc Silicon PNP Darlington Power Transistor 2SB1470 DESCRIPTION High forward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplification Optimum for 120W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sb1436.pdf
isc Silicon PNP Power Transistors 2SB1436 DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 5W(Max)@T =25 C C Complement to Type 2SD2166 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE
2sb1421.pdf
isc Silicon PNP Power Transistor 2SB1421 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2140 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAX
2sb1420.pdf
isc Silicon PNP Darlington Power Transistor 2SB1420 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@I = -8A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATING
2sb1454.pdf
isc Silicon PNP Power Transistor 2SB1454 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD2202 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-current switching applications. AB
2sb1419.pdf
isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER
2sb1400.pdf
isc Silicon PNP Darlington Power Transistor 2SB1400 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sb1468.pdf
isc Silicon PNP Power Transistor 2SB1468 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.25A) CE(sat) C B Complement to Type 2SD2219 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed inverters,converters. ABSOL
2sb1495.pdf
isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Low-Collector Saturation Voltage- V = -1.5V(Max.)@I = -1.5A CE(sat) C Complement to Type 2SD2257 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power switching applications. A
2sb1411.pdf
isc Silicon PNP Darlington Power Transistor 2SB1411 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -1A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS H
2sb1403.pdf
isc Silicon PNP Darlington Power Transistor 2SB1403 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25
2sb1429.pdf
isc Silicon PNP Power Transistor 2SB1429 DESCRIPTION High Current Capability High Power Dissipation Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Complement to Type 2SD2155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifie
Otros transistores... 2SB1462 , 2SB1463 , 2SB1464 , 2SB1466 , 2SB147 , 2SB1473 , 2SB148 , 2SB1481 , BC547B , 2SB1489 , 2SB149 , 2SB1490 , 2SB1494 , 2SB1495 , 2SB149N , 2SB15 , 2SB150 .
History: DWA405 | CTP1731
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