2SB1495
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1495
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2SB1495
2SB1495
Datasheet (PDF)
..2. Size:231K inchange semiconductor
2sb1495.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1495DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -1.5ACE(sat) CComplement to Type 2SD2257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power switching applications.A
8.1. Size:68K panasonic
2sb1493.pdf
Power Transistors2SB1493Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD225515.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000 3.2 0.1Low collector to emitter saturation voltage VCE(sat):
8.2. Size:95K panasonic
2sb1490.pdf
Power Transistors2SB1490Silicon PNP epitaxial planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2250 3.30.2 Features Optimum for 80 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2 Absolute
8.3. Size:57K panasonic
2sb1492 2sd2254 2sd2254.pdf
Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
8.4. Size:35K hitachi
2sb1494.pdf
2SB1494Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary Pair with 2SD2256OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SB1494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCol
8.5. Size:222K inchange semiconductor
2sb1492.pdf
isc Silicon PNP Darlington Power Transistor 2SB1492DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2254Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Optimum for 60W HiFi
8.6. Size:221K inchange semiconductor
2sb1490.pdf
isc Silicon PNP Darlington Power Transistor 2SB1490DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD2250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 80W HiFi o
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