2SB168 Todos los transistores

 0.1. Size:371K  toshiba
 2sb1682.pdf

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 Unit mm Power Amplifier Applications High-Power Switching Applications High-breakdown voltage VCEO = -160 V (min) Complementary to 2SD2636 Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltag

 0.2. Size:29K  sanyo
 2sb1683 2sd2639 2sd2639.pdf

Ordering number ENN6960 2SB1683 / 2SD2639 2SB1683 PNP Epitaxial Planar Silicon Transistor 2SD2639 NPN Triple Diffused Planar Silicon Transistor 2SB1683 / 2SD2639 140V / 12A, AF 60W Output Applications Features Package Dimensions Wide ASO because of on-chip ballast resistance. unit mm Good dependence of fT on current and good HF 2010C characteristic. [2SB1683 / 2SD26

 0.3. Size:44K  renesas
 2sb1688.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.4. Size:1399K  rohm
 2sb1689.pdf

2SB1689 Datasheet General purpose amplification (-12V, -1.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO -12V IC -1.5A UMT3 lFeatures lInner circuit l l 1)A collector current is large 2)Collector saturation voltage is low. VCE(sat) -200mV at IC=-500mA/IB=-25mA lApplication l LOW FREQUENCY AMPLIFIER, DRIVER lPackaging

 0.5. Size:1240K  sanken-ele
 2sb1685 2sb1687.pdf

Print to PDF without this message by purchasing novaPDF (http //www.novapdf.com/) Print to PDF without this message by purchasing novaPDF (http //www.novapdf.com/)

 0.6. Size:38K  sanken-ele
 2sb1686.pdf