2SB169 Todos los transistores

 

2SB169 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB169
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 9 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 0.4 MHz
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO1
 

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Principales características: 2SB169

 0.1. Size:77K  renesas
2sb1691.pdf pdf_icon

2SB169

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation PC = 800 mW (when usi

 0.2. Size:88K  renesas
r07ds0272ej 2sb1691-1.pdf pdf_icon

2SB169

Preliminary Datasheet 2SB1691 R07DS0272EJ0300 (Previous REJ03G0482-0200) Silicon PNP Epitaxial Planer Rev.3.00 Low Frequency Power Amplifier Mar 28, 2011 Features Small size package MPAK (SC 59A) Large Maximum current IC = 1 A Low collector to emitter saturation voltage VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/ 0.05 A) High power dissipation

 0.3. Size:68K  rohm
2sb1690.pdf pdf_icon

2SB169

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit mm) Low frequency amplifier TSMT3 Deiver 1.0MAX 2.9 0.85 0.4 0.7 Features (3) 1) A collector current is large. 2) Collector saturation voltage is low. (1) (2) VCE(sat) max. -180mV 0.95 0.95 0.16 1.9 at IC= -1A / IB= -50mA (1) Base (2) Emitter Ea

 0.4. Size:1510K  rohm
2sb1695k.pdf pdf_icon

2SB169

2SB1695K Datasheet Datasheet General purpose amplification(-30V,-1.5A) lOutline l SOT-346 Parameter Value SC-59 VCEO -30V IC -1.5A SMT3 lFeatures lInner circuit l l 1) Collector current is large. 2) VCE(sat) -370mV at IC= -1A / IB= -50mA 3) Complementary NPN Types 2SD2657K lApplication l LOW FREQUENCY AMPLIFIER, DRIVER

Otros transistores... 2SB1647 , 2SB1648 , 2SB1649 , 2SB165 , 2SB1659 , 2SB166 , 2SB167 , 2SB168 , A940 , 2SB16A , 2SB17 , 2SB170 , 2SB171 , 2SB172 , 2SB172A , 2SB173 , 2SB173B .

 

 
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