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View apt94n60l2c3 detailed specification:

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg G Avalanche Energy Rated TO-264 Max Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25 C 94 Amps IDM Pulsed Drain Current 1 282 VGS Gate-Source Voltage Continuous 20 Volts VGSM Gate-Source Voltage Transient 30 Total Power Dissipation @ TC = 25 C 833 Watts PD Linear Derating Factor 6.67 W/ C TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 C TL Lead Temperature 0.063" from Case for 10 Sec. 300 dv /dt Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125 C) 50 V/ns IAR Repetitive... See More ⇒

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