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View h2n4401 detailed specification:

Spec. No. HE6215 HI-SINCERITY Issued Date 1992.09.22 Revised Date 2002.02.22 MICROELECTRONICS CORP. Page No. 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features TO-92 Complementary to H2N4403 High Power Dissipation 625 mW at 25 C High DC Current Gain 100-300 at 150mA High Breakdown Voltage 40 V Min. Absolute Maximum Ratings Maximum Temperatures Storage Temperature........................................................................................................................... -55 +150 C Junction Temperature................................................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25 C).............................. See More ⇒

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