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View irfp3306pbf detailed specification:

PD - 97128 IRFP3306PbF HEXFET Power MOSFET Applications D VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.3m l Uninterruptible Power Supply l High Speed Power Switching max. 4.2m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 160A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S D l Lead-Free G TO-247AC GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 160c ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110 A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drain Current d 620 PD @TC ... See More ⇒

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