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View ixgh32n60bu1 detailed specification:

IXGH 32N60BU1 VCES = 600 V HiPerFASTTM IGBT IC25 = 60 A with Diode VCE(sat) = 2.3 V tfi = 80 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25 C60 A E = Emitter, TAB = Collector IC90 TC = 90 C32 A ICM TC = 25 C, 1 ms 120 A SSOA VGE = 15 V, TVJ = 125 C, RG = 33 ICM = 64 A Features (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES International standard packages PC TC = 25 C 200 W JEDEC TO-247 SMD High frequency IGBT and antiparallel TJ -55 ... +150 C FRED in one package TJM 150 C High current handling capability Tstg -55 ... +150 C Newest generation HDMOSTM process Maximum Lead and Tab temperature for soldering 300 C MOS Gate turn-on 1.6 mm (0.... See More ⇒

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