Скачать даташит для ixgh32n60bu1:

IXGH 32N60BU1 VCES = 600 VHiPerFASTTM IGBTIC25 = 60 Awith DiodeVCE(sat) = 2.3 Vtfi = 80 nsSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 V EG = Gate, C = Collector,IC25 TC = 25C60 AE = Emitter, TAB = CollectorIC90 TC = 90C32 AICM TC = 25C, 1 ms 120 ASSOA VGE = 15 V, TVJ = 125C, RG = 33 ICM = 64 AFeatures(RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES International standard packagesPC TC = 25C 200 W JEDEC TO-247 SMD High frequency IGBT and antiparallelTJ -55 ... +150 CFRED in one packageTJM 150 C High current handling capabilityTstg -55 ... +150 C Newest generation HDMOSTM process Maximum Lead and Tab temperature for soldering 300 C MOS Gate turn-on1.6 mm (0.