All Transistors. Equivalents Search

 

View apt15gn120sdq1g detailed specification:

apt15gn120sdq1gapt15gn120sdq1g

TYPICAL PERFORMANCE CURVES APT15GN120BD_SDQ1(G) APT15GN120BDQ1 APT15GN120SDQ1 APT15GN120BDQ1(G) APT15GN120SDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a D3PAK slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive (S) design and minimizes losses. C G E G C 1200V Field Stop E Trench Gate Low VCE(on) Easy Paralleling C G E Applications Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Parameter Symbol UNIT APT15GN120BD_SDQ1(G) VCES Co... See More ⇒

 

Keywords - ALL TRANSISTORS SPECS

 apt15gn120sdq1g.pdf Design, MOSFET, Power

 apt15gn120sdq1g.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt15gn120sdq1g.pdf Database, Innovation, IC, Electricity

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y

 

 

 

Popular searches

irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet

 

 

↑ Back to Top
.