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DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification 1997 Dec 08 Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1109; BF1109R; BF1109WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns 4 3 forward transfer admittance to input 1 source capacitance ratio 2 drain Low noise gain controlled amplifier 3 gate 2 up to 1 GHz 2 1 4 gate 1 Internal self-biasing circuit to Top view MSB035 ensure good cross-modulation performance during AGC and good BF1109R marking code NBp. DC stabilization. Fig.2 Simplified outline APPLICATIONS (SOT143R). VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equ... See More ⇒

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