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Tin Far Electronic CO.,LTD Page No 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol Outline TFN2444 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 mA Collector Current (Pulse) ICP 1.5 (Note) A Power Dissipation Pd 225 mW Junction Temperature Tj 150 C Storage Temperature Tstg -55 +150 C Note Single pulse, Pw=10ms TIN FAR ELECTRONIC CO.,LTD Tin Far Electronic CO.,LTD Page No 2/5 Characteristics (Ta=25 C) Symbol Min. Typ. Max. Unit Test Conditions... See More ⇒

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