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Tin Far Electronic CO.,LTD Page No: 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol OutlineTFN2444 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C)Parameter Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V Collector Current (DC) IC 800 mA Collector Current (Pulse) ICP 1.5 (Note) A Power Dissipation Pd 225 mW Junction Temperature Tj 150 CStorage Temperature Tstg -55~+150 CNote : Single pulse, Pw=10ms TIN FAR ELECTRONIC CO.,LTD Tin Far Electronic CO.,LTD Page No: 2/5 Characteristics (Ta=25C)Symbol Min. Typ. Max. Unit Test Conditions