TGH80N65F2DR PDF Specs and Replacement
Type Designator: TGH80N65F2DR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 577 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 32 nS
Coesⓘ - Output Capacitance, typ: 212 pF
Package: TO247
TGH80N65F2DR Substitution
TGH80N65F2DR PDF specs
tgh80n65f2dr.pdf
TGH80N65F2DR Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology AEC Q101 Qualified Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar, PTC Heate... See More ⇒
tgh80n65f2d2.pdf
TGH80N65F2D2 Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder, Vienna Rectifier Device Package Marking R... See More ⇒
tgh80n65f2ds.pdf
TGH80N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH80N65F2DS... See More ⇒
Specs: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
Keywords - TGH80N65F2DR transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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