SKM22GD123D Datasheet and Replacement
Type Designator: SKM22GD123D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 25 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: MODULE
- IGBT Cross-Reference
SKM22GD123D Datasheet (PDF)
Datasheet: SKM200GAY173D , SKM200GB063D , SKM200GB123D , SKM200GB124D , SKM200GB173D , SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , BT40T60ANF , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , SKM300GAR063D , SKM300GAR123D , SKM300GAX123D , SKM300GAY123D .
History: IXXH100N60B3
Keywords - SKM22GD123D transistor datasheet
SKM22GD123D cross reference
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History: IXXH100N60B3
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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