SKM22GD123D Specs and Replacement
Type Designator: SKM22GD123D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 145 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5 V @25℃
tr ⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: MODULE SKM22GD123D Substitution - IGBTⓘ Cross-Reference Search
SKM22GD123D datasheet
Specs: SKM200GAY173D, SKM200GB063D, SKM200GB123D, SKM200GB124D, SKM200GB173D, SKM200GB174D, SKM200GBD123D1S, FGH50N6S2D, RJP30E2DPP-M0, SKM300GA123D, SKM300GA173D, SKM300GAL063D, SKM300GAL123D, SKM300GAR063D, SKM300GAR123D, SKM300GAX123D, SKM300GAY123D
Keywords - SKM22GD123D transistor spec
SKM22GD123D cross reference
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