SKM300GAR063D IGBT. Datasheet pdf. Equivalent
Type Designator: SKM300GAR063D
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 2000 pF
Package: MODULE
SKM300GAR063D Transistor Equivalent Substitute - IGBT Cross-Reference Search
SKM300GAR063D Datasheet (PDF)
skm300gar063d.pdf
SKM 300GB063D Absolute Maximum RatingsSymbol Conditions Values UnitsIGBT SEMITRANS 3 Inverse DiodeSuperfast IGBT Modules SKM 300GB063D
skm300gar12e4.pdf
SKM300GAR12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 3tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GAR12E4Tc =
skm300ga12v.pdf
SKM300GA12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 420 ATj = 175 CTc =80C 319 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 4tpsc VGE 15 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12VTc =80C 264 AIFnom
skm300ga12e4.pdf
SKM300GA12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12E4Tc =80
skm300gal12t4.pdf
SKM300GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GAL12T4Tc =80
skm300ga12t4.pdf
SKM300GA12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS 4tpsc VGE 15 V Tj =150C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GA12T4T
skm300ga173d.pdf
SEMITRANS MAbsolute Maximum Ratings ValuesIGBT ModulesSymbol Conditions 1) UnitsV 1700 VCESSKM 300 GA 173 DV R = 20 k 1700 VCGR GEI T = 25/80 C 300 / 200 AC caseI T = 25/80 C; t = 1 ms 600 / 400 ACM case pV 20 VGESP per IGBT, Tcase = 25 C 1750 WtotTj, (Tstg) 40 . . .+150 (125) CVisol AC, 1 min. 4000 Vhumidity DIN 40 040 Class Fclimate
skm300gax123d skm300gay123d.pdf
SEMITRANS MAbsolute Maximum RatingsValuesIGBT ModulesSymbol Conditions 1)UnitsVCES 1200 VVCGR RGE = 20 k 1200 V SKM 300 GAX 123 D 6)IC Tcase = 25/80 C 300 / 220 ASKM 300 GAY 123 D 6)ICM Tcase = 25/80 C; tp = 1 ms 600 / 440 AVGES 20 VPtot per IGBT, Tcase = 25 C 1660 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 min. 2500 Vhumidity DIN 40 040 Class F
skm300gal12e4.pdf
SKM300GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 422 ATj = 175 CTc =80C 324 AICnom 300 AICRM ICRM = 3xICnom 900 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 353 ATj = 175 CSKM300GAL12E4Tc =80C 264
Datasheet: SKM200GB174D , SKM200GBD123D1S , FGH50N6S2D , SKM22GD123D , SKM300GA123D , SKM300GA173D , SKM300GAL063D , SKM300GAL123D , YGW60N65F1A1 , SKM300GAR123D , SKM300GAX123D , SKM300GAY123D , SKM300GB063D , SKM300GB123D , SKM300GB124D , SKM300GB174D , SKM400GA062D .
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IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2