SKM400GAL062D IGBT. Datasheet pdf. Equivalent

   Type Designator: SKM400GAL062D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1400 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 475 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 120 nS
   Coesⓘ - Output Capacitance, typ: 2500 pF
   Package: MODULE

SKM400GAL062D Transistor Equivalent Substitute - IGBT Cross-Reference Search

SKM400GAL062D Datasheet (PDF)

..1. Size:138K semikron
skm400ga062d skm400gal062d skm400gar062d skm400gb062d.pdf

SEMITRANS MAbsolute Maximum RatingsValuesPT-IGBT ModulesSymbol Conditions 1)UnitsVCES 600 VVCGR RGE = 20 k 600 V SKM 400 GA 062 D *)IC Tcase = 25/60 C 475 / 400 ASKM 400 GB 062 DICM Tcase = 25/60 C; tp = 1 ms 950 / 800 ASKM 400 GAL 062 D 6)VGES 20 VSKM 400 GAR 062 D 6)Ptot per IGBT, Tcase = 25 C 1400 WTj, (Tstg) 40 ... +150 (125) CVisol AC, 1 m

5.1. Size:475K semikron
skm400gal12v.pdf

SKM400GAL12VAbsolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES Tj =25C 1200 VIC Tc =25C 612 ATj = 175 CTc =80C 467 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 720 VSEMITRANS 3tpsc VGE 20 V Tj =125C 10 sVCES 1200 VTj -40 ... 175 CInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GAL12VTc =80C 329 AIFn

5.2. Size:414K semikron
skm400gal12e4.pdf

SKM400GAL12E4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CIGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GAL12E4Tc =80C 32

5.3. Size:415K semikron
skm400gal12t4.pdf

SKM400GAL12T4Absolute Maximum Ratings Symbol Conditions Values UnitIGBTVCES 1200 VIC Tc =25C 618 ATj = 175 CTc =80C 475 AICnom 400 AICRM ICRM = 3xICnom 1200 AVGES -20 ... 20 VVCC = 800 VSEMITRANS3tpsc VGE 15 V Tj = 150 C 10 sVCES 1200 VTj -40 ... 175 CFast IGBT4 ModulesInverse diodeIF Tc =25C 440 ATj = 175 CSKM400GAL12T4Tc =80

5.4. Size:743K semikron
skm400gal124d skm400gar124d skm400gb124d.pdf