SM2G200US60 Datasheet and Replacement
Type Designator: SM2G200US60
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 100 nS
Package: 7PM-BB
SM2G200US60 substitution
SM2G200US60 Datasheet (PDF)
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Datasheet: SKM75GD123D , SKM75GD124D , SKM75GDL123D , SM2G100US120 , SM2G100US60 , SM2G150US120 , SM2G150US60 , SM2G200US120 , IRG4PC50UD , SM2G300US60 , SM2G400US60 , SM2G50US120 , SM2G50US60 , SM2G75US120 , SM2G75US60 , SMBH1G100US120 , SMBH1G100US60 .
History: HIA50N65IH-JA | IQAB50N60D1 | STGW30H60DFB | MPMC150B120RH | JT010N065FED | STGP30H60DF | JT010N065SED
Keywords - SM2G200US60 transistor datasheet
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History: HIA50N65IH-JA | IQAB50N60D1 | STGW30H60DFB | MPMC150B120RH | JT010N065FED | STGP30H60DF | JT010N065SED
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