SM2G50US120 Datasheet and Replacement
Type Designator: SM2G50US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 7PM-AA
- IGBT Cross-Reference
SM2G50US120 Datasheet (PDF)
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Datasheet: SM2G100US120 , SM2G100US60 , SM2G150US120 , SM2G150US60 , SM2G200US120 , SM2G200US60 , SM2G300US60 , SM2G400US60 , IRGB20B60PD1 , SM2G50US60 , SM2G75US120 , SM2G75US60 , SMBH1G100US120 , SMBH1G100US60 , SMBH1G150US120 , SMBH1G150US60 , SMBH1G200US120 .
History: DIM600DDM17-A
Keywords - SM2G50US120 transistor datasheet
SM2G50US120 cross reference
SM2G50US120 equivalent finder
SM2G50US120 lookup
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SM2G50US120 replacement
History: DIM600DDM17-A
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