SM2G75US120 Datasheet and Replacement
Type Designator: SM2G75US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 150 nS
Package: 7PM-AA
SM2G75US120 substitution
SM2G75US120 Datasheet (PDF)
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Datasheet: SM2G150US120 , SM2G150US60 , SM2G200US120 , SM2G200US60 , SM2G300US60 , SM2G400US60 , SM2G50US120 , SM2G50US60 , SGT60U65FD1PT , SM2G75US60 , SMBH1G100US120 , SMBH1G100US60 , SMBH1G150US120 , SMBH1G150US60 , SMBH1G200US120 , SMBH1G200US60 , SMBH1G300US60 .
History: YGW75N65FP
Keywords - SM2G75US120 transistor datasheet
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History: YGW75N65FP
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