SMBH1G150US120 Specs and Replacement
Type Designator: SMBH1G150US120
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Package: 7PM-BB SMBH1G150US120 Substitution - IGBTⓘ Cross-Reference Search
SMBH1G150US120 datasheet
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Specs: SM2G300US60, SM2G400US60, SM2G50US120, SM2G50US60, SM2G75US120, SM2G75US60, SMBH1G100US120, SMBH1G100US60, GT60N321, SMBH1G150US60, SMBH1G200US120, SMBH1G200US60, SMBH1G300US60, SMBH1G400US60, SMBH1G50US120, SMBH1G50US60, SMBH1G75US120
Keywords - SMBH1G150US120 transistor spec
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History: APT65GP60L2DF2
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