All IGBT. IGC142T120T8RL Datasheet

 

IGC142T120T8RL IGBT. Datasheet pdf. Equivalent


   Type Designator: IGC142T120T8RL
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   Package: CHIP

 IGC142T120T8RL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IGC142T120T8RL Datasheet (PDF)

 ..1. Size:68K  infineon
igc142t120t8rl.pdf

IGC142T120T8RL
IGC142T120T8RL

IGC142T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC142T120T8RL 1200V

 1.1. Size:68K  infineon
igc142t120t8rm.pdf

IGC142T120T8RL
IGC142T120T8RL

IGC142T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC142T12

 3.1. Size:69K  infineon
igc142t120t6rh.pdf

IGC142T120T8RL
IGC142T120T8RL

IGC142T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low V medium / high power modules CEsat soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn

 3.2. Size:70K  infineon
igc142t120t6rl.pdf

IGC142T120T8RL
IGC142T120T8RL

IGC142T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH

 3.3. Size:70K  infineon
igc142t120t6rm.pdf

IGC142T120T8RL
IGC142T120T8RL

IGC142T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turnoff positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f

Datasheet: APT33GF120LRD , IGC189T120T8RL , IGC189T120T6RL , IGC168T170S8RM , APT50GF120HR , IGC168T170S8RH , APT50GF120LR , APT50GF60AR , MBQ60T65PES , IGC142T120T8RM , IGC15T65QE , APT50GF60LRD , IGC142T120T6RH , IGC142T120T6RL , IGC142T120T6RM , IGC28T65T8M , IGC28T65QE .

 

 
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