SMBL1G150US120 Datasheet and Replacement
Type Designator: SMBL1G150US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 7PM-BB
- IGBT Cross-Reference
SMBL1G150US120 Datasheet (PDF)
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Datasheet: SMBH1G300US60 , SMBH1G400US60 , SMBH1G50US120 , SMBH1G50US60 , SMBH1G75US120 , SMBH1G75US60 , SMBL1G100US120 , SMBL1G100US60 , YGW60N65F1A2 , SMBL1G150US60 , SMBL1G200US120 , SMBL1G200US60 , SMBL1G300US60 , SMBL1G400US60 , SMBL1G50US120 , SMBL1G50US60 , SMBL1G75US120 .
History: DIM600DDM17-A
Keywords - SMBL1G150US120 transistor datasheet
SMBL1G150US120 cross reference
SMBL1G150US120 equivalent finder
SMBL1G150US120 lookup
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SMBL1G150US120 replacement
History: DIM600DDM17-A
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