SME6G15US120 Datasheet and Replacement
Type Designator: SME6G15US120
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 17PM-CA
- IGBT Cross-Reference
SME6G15US120 Datasheet (PDF)
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Datasheet: SMC7G20US120 , SMC7G20US60 , SMC7G25US120 , SMC7G30US60 , SMC7G50US60 , SMC7G5US120 , SME6G10US120 , SME6G10US60 , RJP30E2DPP-M0 , SME6G15US60 , SME6G20US120 , SME6G20US60 , SME6G25US120 , SME6G30US60 , SME6G50US60 , SME6G5US120 , SNG201017 .
History: IKZ75N65EH5 | IRGIB4630DPBF
Keywords - SME6G15US120 transistor datasheet
SME6G15US120 cross reference
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SME6G15US120 replacement
History: IKZ75N65EH5 | IRGIB4630DPBF
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