IGC28T65QE PDF and Equivalents Search

 

IGC28T65QE Specs and Replacement

Type Designator: IGC28T65QE

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

Package: CHIP

 IGC28T65QE Substitution

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IGC28T65QE datasheet

 ..1. Size:234K  infineon
igc28t65qe.pdf pdf_icon

IGC28T65QE

IGC28T65QE High Speed IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology discrete components and modules high speed switching series third C generation low VCE(sat) Applications low EMI uninterruptible power supplies low turn-off losses welding converters G positive temperature coefficient converters with high switching... See More ⇒

 6.1. Size:72K  infineon
igc28t65t8m.pdf pdf_icon

IGC28T65QE

IGC28T65T8M IGBT3 Chip Medium Power Features Recommended for 650V Trench & Field Stop technology power modules C high short circuit capability, self limiting short circuit current positive temperature coefficient Applications easy paralleling drives G Qualified according to JEDEC for target E applications Chip Type VCE ICn Die Size Package IGC28T65T8... See More ⇒

 6.2. Size:118K  infineon
sigc28t65e.pdf pdf_icon

IGC28T65QE

SIGC28T65E IGBT3 Chip Features Recommended for 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications short tail current drives positive temperature coefficient easy paralleling G E Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size Package SIGC28T65E 650... See More ⇒

 7.1. Size:117K  infineon
sigc28t60e.pdf pdf_icon

IGC28T65QE

SIGC28T60E IGBT3 Chip Features This chip is used for 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses Applications short tail current drives positive temperature coefficient G easy paralleling E Chip Type VCE IC Die Size Package SIGC28T60E 600V 50A 6.57 x 4.2 mm2 sawn on foil ... See More ⇒

Specs: IGC142T120T8RL, IGC142T120T8RM, IGC15T65QE, APT50GF60LRD, IGC142T120T6RH, IGC142T120T6RL, IGC142T120T6RM, IGC28T65T8M, SGT40N60NPFDPN, BUK854-800A, BUK856-400IZ, BUK856-800A, BUK866-400IZ, CM75DY-28H, CT15SM-24, CT20AS-8, CT20ASJ-8

Keywords - IGC28T65QE transistor spec

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