All IGBT. FGH40N60SMDF Datasheet

 

FGH40N60SMDF IGBT. Datasheet pdf. Equivalent

Type Designator: FGH40N60SMDF

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 349

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 80

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9

Maximum G-E Threshold Voltag |VGE(th)|, V: 6

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 20

Collector Capacity (Cc), typ, pF: 180

Total Gate Charge (Qg), typ, nC: 119

Package: TO247

FGH40N60SMDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40N60SMDF Datasheet (PDF)

 ..1. Size:352K  fairchild semi
fgh40n60smdf.pdf

FGH40N60SMDF FGH40N60SMDF

March 2011FGH40N60SMDFtm600V, 40A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High

 ..2. Size:578K  onsemi
fgh40n60smdf.pdf

FGH40N60SMDF FGH40N60SMDF

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:482K  onsemi
fgh40n60smdf-f085.pdf

FGH40N60SMDF FGH40N60SMDF

IGBT - Field Stop600 V, 40 AFGH40N60SMDF-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductor newseries of Field Stop IGBTs offer the optimum performancewww.onsemi.comfor Automotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.VCES ICFeatures600 V 40 A Max Junction Temperature TJ = 175CC

 3.1. Size:1290K  fairchild semi
fgh40n60smd.pdf

FGH40N60SMDF FGH40N60SMDF

November 2010FGH40N60SMD600V, 40A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, Welder and SMPS applications where low con- High curre

 3.2. Size:303K  onsemi
fgh40n60smd.pdf

FGH40N60SMDF FGH40N60SMDF

April 2013FGH40N60SMD600 V, 40 A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new seriesof field stop 2nd generation IGBTs offer the optimum perfor- Positive Temperaure Co-efficient for Easy Parallel Operatingmance for solar inverter, UPS, welder, telecom, ESS and PFC High C

 3.3. Size:369K  onsemi
fgh40n60smd-f085.pdf

FGH40N60SMDF FGH40N60SMDF

IGBT - Field Stop 600 V, 40 AFGH40N60SMD-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.FeaturesC Maximum Junction Temperature: TJ = 175C Positive Tem

Datasheet: FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , XNF15N60T , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD .

 

 
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