All IGBT. FGH40N60SMDF Datasheet

 

FGH40N60SMDF IGBT. Datasheet pdf. Equivalent


   Type Designator: FGH40N60SMDF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 349 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 180 pF
   Qgⓘ - Total Gate Charge, typ: 119 nC
   Package: TO247

 FGH40N60SMDF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH40N60SMDF Datasheet (PDF)

Datasheet: FGH20N60SFD , FGH20N60UFD , FGH25N120FTDS , FGH30N120FTD , FGH30N60LSD , FGH40N60SF , FGH40N60SFD , FGH40N60SMD , IRGP4063 , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGH60N60SMD , FGH60N60UFD .

 

 
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