All IGBT. FGH60N60SMD Datasheet

 

FGH60N60SMD IGBT. Datasheet pdf. Equivalent

Type Designator: FGH60N60SMD

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 600

Maximum Collector-Emitter Voltage |Vce|, V: 600

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 120

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9

Maximum G-E Threshold Voltag |VGE(th)|, V: 6

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 47

Collector Capacity (Cc), typ, pF: 270

Total Gate Charge (Qg), typ, nC: 189

Package: TO247

FGH60N60SMD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

FGH60N60SMD Datasheet (PDF)

 ..1. Size:391K  fairchild semi
fgh60n60smd.pdf

FGH60N60SMD FGH60N60SMD

March 2011FGH60N60SMDtm600V, 60A Field Stop IGBTFeatures General Description Maximum Junction Temperature : TJ =175oC Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Solar Positive Temperaure Co-efficient for easy parallel operatingInverter, UPS, SMPS, IH and PFC applications where low con- High c

 ..2. Size:693K  onsemi
fgh60n60smd.pdf

FGH60N60SMD FGH60N60SMD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:647K  fairchild semi
fgh60n60sf.pdf

FGH60N60SMD FGH60N60SMD

July 2008FGH60N60SFtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and switc

 5.2. Size:756K  fairchild semi
fgh60n60sfd.pdf

FGH60N60SMD FGH60N60SMD

April 2009FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and swi

 5.3. Size:396K  onsemi
fgh60n60sf.pdf

FGH60N60SMD FGH60N60SMD

IGBT - Field Stop600 V, 60 AFGH60N60SFDescriptionUsing novel field stop IGBT technology, ON Semiconductors fieldstop IGBTs offer the optimum performance for solar inverter, UPS,www.onsemi.comwelder and PFC applications where low conduction and switchinglosses are essential.VCES ICFeatures600 V 60 A High Current CapabilityC Low Saturation Voltage: VCE(sat) =

 5.4. Size:768K  onsemi
fgh60n60sfd.pdf

FGH60N60SMD FGH60N60SMD

August 2008FGH60N60SFDtm600V, 60A Field Stop IGBTFeatures General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new seriesof Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: VCE(sat) =2.3V @ IC = 60AHeating, UPS, SMPS and PFC applications where low conduc- High input impedancetion and sw

 5.5. Size:476K  onsemi
fgh60n60sfdtu-f085.pdf

FGH60N60SMD FGH60N60SMD

IGBT - Field Stop600 V, 60 AFGH60N60SFDTU-F085DescriptionUsing Novel Field Stop IGBT Technology, ON Semiconductorsnew series of Field Stop IGBTs offer the optimum performance forwww.onsemi.comAutomotive Chargers, Inverter, and other applications where lowconduction and switching losses are essential.CFeatures High Current Capability Low Saturation Voltage: VCE(s

Datasheet: FGH40N60SMD , FGH40N60SMDF , FGH40N60UF , FGH40N60UFD , FGH40N65UFD , FGH50N3 , FGH60N60SF , FGH60N60SFD , FGD4536 , FGH60N60UFD , FGH75N60UF , FGH80N60FD , FGH80N60FD2 , FGL35N120FTD , FGL60N100BNTD , FGP20N60UFD , FGP5N60LS .

 

 
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