CT15SM-24 Specs and Replacement
Type Designator: CT15SM-24
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO3P
CT15SM-24 Substitution - IGBT ⓘ Cross-Reference Search
CT15SM-24 datasheet
ct15sm-24.pdf
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT15SM-24 GENERAL INVERTER UPS USE CT15SM-24 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 r 3.2 2 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE q w COLLECTOR VCES ............................................................................. 1200V e EMITTER IC ............................................................. See More ⇒
Specs: IGC142T120T6RM, IGC28T65T8M, IGC28T65QE, BUK854-800A, BUK856-400IZ, BUK856-800A, BUK866-400IZ, CM75DY-28H, SGT50T65FD1PN, CT20AS-8, CT20ASJ-8, CT20ASL-8, CT20TM-8, CT20VM-8, CT20VML-8, CT20VS-8, CT20VSL-8
Keywords - CT15SM-24 transistor spec
CT15SM-24 cross reference
CT15SM-24 equivalent finder
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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